13003 npn epitaxial silicon transistor elite enterprises (h.k.) co., ltd. part no.: 13003 flat 2505, 25/f., nanyang plaza, 57 hung to road, kwun tong, h.k. tel: (852) 2723-3122 fax: (852) 2723-3990 email: info@elite-ent.com.hk page: 1 / 1 high voltage switching applications collector-emitter voltage: v ceo =400v collector dissipation: p c (max)=1500mw absolute maximum ratings (ta=25 o c) characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current i c 1500 ma collector dissipation p c 1500 mw junction temperature t j 150 o c storage temperature t stg -55~+150 o c electrical characteristics (ta=25 o c) characteristic symbol test conditions min max unit collector-base breakdown voltage bv cbo i c =1ma, i e =0 700 v collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 400 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 9 v collector cut-off current i cbo v cb =700v, i e =0 1 ma collector cut-off current i ceo v ce =400v, i b =0 500 g a emitter cut-off current i ebo v eb =9v, i c =0 1 ma dc current gain h fe(1) v ce =2v, i c =0.5a 8 40 h fe(2) v ce =10v, i c =0.5ma 5 collector-emitter saturation voltage v ce(sat) i c =1a i b =250ma 1 v base-emitter saturation voltage v be(sat) i c =1a, i b =250ma 1.2 v base-emitter voltage v be i e =2a 3 v transition frequency f t v ce =10v, i c =100ma f=1mhz 5 mhz fall time t f ic=1a, i b1 =-1 b2 =0.2ma, 0.5 s storage time t s vcc= 100v 2.5 s h fe (1) classification classification h fe(1) 8-15 15-20 20-25 25-30 30-35 35-40 1. base 2. collector 3. emitter to-220
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